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Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2337-2342
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Vertical profile control in ultrahigh-aspect-ratio contact hole etching with 0.05-μm-diameter range
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Author keywords
C4F8 O2 Ar; CHF3 CO; Contact hole etching; Dipole ring magnetron; High aspect ratio; High density plasma; Reactive ion etching; Secondary ion mass spectrometry; Vertical profile
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Indexed keywords
ASPECT RATIO;
DEPOSITION;
POLYMERS;
SECONDARY ION MASS SPECTROMETRY;
CONTACT HOLE ETCHING;
MAGNETRON REACTIVE ION ETCHING (MRIE);
ULTRAHIGH ASPECT RATIO;
REACTIVE ION ETCHING;
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EID: 0032050606
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.2337 Document Type: Article |
Times cited : (18)
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References (10)
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