Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 710-716

  Carmody, M ^a   Lee, D ^a   Zandian, M ^a   Phillips, J ^b   Arias, J ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Dislocations; HgCdTe; Molecular beam epitaxy (MBE)

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SUBSTRATES;

MISFIT-DISLOCATION MOTION;

MERCURY COMPOUNDS;

EID: 0042768021     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0057-7     Document Type: Conference Paper

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