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Volumn 399, Issue , 1996, Pages 303-311
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Heteroepitaxial layer morphology and misfit defect formation
a
a
DRA
(United Kingdom)
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATIONS (CRYSTALS);
FREE ENERGY;
MORPHOLOGY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRAIN;
STRESS RELIEF;
HETEROEPITAXIAL LAYER;
MISFIT DEFECT FORMATION;
MISFIT STRAIN;
PARTIAL ELASTIC STRESS RELIEF;
STRAIN FLUCTUATIONS;
UNDULATIONS;
SEMICONDUCTING FILMS;
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EID: 0029701098
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (7)
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References (45)
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