Strain relief in epitaxial HgCdTe by growth on a reticulated substrate

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 669-675

  Rhiger, David R ^a   Sen, Sanghamitra ^a   Gordon, Eli E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; MERCURY COMPOUNDS; RESIDUAL STRESSES; SEMICONDUCTOR GROWTH; STRAIN; SURFACE TOPOGRAPHY; TEXTURES;

LATTICE MISMATCH; MERCURY CADMIUM TELLURIDE; STRAIN RELIEF;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033723123     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0203-4     Document Type: Article

References (11)

1. M.A. Berding, W.D. Nix, D.R. Rhiger, S. Sen, and A. Sher, in this issue.
2. D.R. Rhiger, J.M. Peterson, R.M. Emerson, E.E. Gordon, S. Sen, Y. Chen, and M. Dudley, J. Electron. Mater. 27, 615 (1998).
3. S.P. Tobin, F.T.J. Smith, P.W. Norton, J. Wu, M. Dudley, D. DiMarzio, and L.G. Casagrande, J. Electron. Mater. 24, 1189 (1995).
4. M.H. Kalisher, P.E. Herning, and T. Tung, Prog. Cryst. Growth and Charact. 29, 41 (1994).
5. D.R. Rhiger, S. Sen, J.M. Peterson, H. Chung, and M. Dudley, J. Electron. Mater. 26, 515 (1997).
6. S.L. Price, H.L. Hettich, S. Sen, M.C. Currie, D.R. Rhiger, and E.O. McLean, J. Electron. Mater. 27, 564 (1998).
7. I. Hähnert and M. Schenk, J. Cryst. Growth 101, 251 (1990).
8. R.B. Schoolar, J. Vac. Sci. Technol. A 2, 77 (1984).
9. E.A. Fitzgerald, G.P. Watson, R.E. Proano, D.G. Ast, P.D. Kirchner, G.D. Pettit, and J.M. Woodall, J. Appl. Phys. 65, 2220 (1989).
10. E.A. Fitzgerald, J. Vac. Sci. Technol. B 7, 782 (1989).
11. G.P. Watson, J.L. Benton, Y.H. Xie, and E.A. Fitzgerald, J. Appl. Phys. 83, 3773 (1998).