Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls

Journal of Electronic Materials

Volumn 27, Issue 11, 1998, Pages 1248-1253

  Zhang, X G ^a   Li, P ^a   Zhao, G ^a   Parent, D W ^a   Jain, F C ^a   Ayers, J E ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

Annealing; Lattice mismatch; Patterned heteroepitaxy; Threading dislocations

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS);

THREADING DISLOCATIONS;

HETEROJUNCTIONS;

EID: 0032207152     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0078-3     Document Type: Article

References (48)

1. R. Beanland, D.J. Dunstan and P.J. Goodhew, Adv. Phys. 45, 87 (1996).
2. R. Fischer, N. Chand, W. Kopp, H. Morkoç, L.P. Erickson and R. Youngman, Appl. Phys. Lett. 47, 397 (1985).
3. K. Maeda, M. Sato, A. Kubo and S. Takeuchi, J. Appl. Phys. 54, 161 (1983).
4. S. Sakai, T. Soga, M. Takeyasu and M. Umeno, Jpn. J. Appl. Phys. 24, L666 (1985).
5. T.H. Windhorn and G.M. Metze, Appl. Phys. Lett. 47, 1031 (1985).
6. J.P. van der Ziel, R.D. Dupuis and J.C. Bean, Appl. Phys. Lett. 48, 1713 (1986).
7. H. Shiraiski, R. Yamada, N. Matsui and M. Umeno, Jpn. J. Appl. Phys. 26, L198 (1987).
8. D.W. Nam, N. Holonyak, K.C. Hsieh, R.W. Kaliski, J.W. Lee, H. Shichijo, J.E. Epler, R.D. Burnham and T.L. Paoli, Appl. Phys. Lett. 51, 39 (1987).
9. R.W. Kaliski, N. Holonyak, K.C. Hsieh, D.W. Nam, J.W. Lee, H. Shichijo, R.D. Burnham, J.E. Epler and H.F. Chung, Appl. Phys. Lett. 50, 836 (1987).
10. R.D. Dupuis, J.P. van der Ziel, R.A. Logan, J.M. Brown and C.J. Pinzone, Appl. Phys. Lett. 50, 407 (1987).
11. J.P. van der Ziel, R.D. Dupuis, R.A. Logan, R.M. Mikulyak, C.J. Pinzone and A. Savage, Appl. Phys. Lett. 50, 454 (1987).
12. M. Razeghi, M. Defour, F. Omnes, Ph. Maurel and J. Chazelas, Appl. Phys. Lett. 53, 725 (1988).
13. J.P. van der Ziel, R.D. Dupuis, R.A. Logan and C.J. Pinzone, Appl. Phys. Lett. 51, 89 (1987).
14. S.N.G. Chu and Nakahara, Appl. Phys. Lett. 56, 434 (1990).
15. E.A. Fitzgerald, P.D. Kirchner, R. Proano, G.D. Pettit, J.M. Woodall and D.G. Ast, Appl. Phys. Lett. 52, 1496 (1988).
16. E.A. Fitzgerald and N. Chand, J. Electron. Mater. 20, 839 (1991).
17. J.E. Ayers, dissertation, Rensselaer Polytechnic Institute, Troy, New York (1990).
18. J.E. Ayers, U. S. Patent Pending (1997).
19. N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry, E.H. Lingunis and N. Haegal, J. Cryst. Growth 107, 129 (1991).
20. A. Ackaert, P. Demeester, L. Buydens, G. Coudenys, P. Van Daele and M. Renaud, J. Cryst. Growth 107, 822 (1991).
21. N. Chand and S.N G. Chu, Appl. Phys. Lett. 58, 74 (1991).
22. P. Sheldon, K.M. Jones, M.M. Al-Jassim and B.G. Yacobi, J. Appl. Phys. 63, 5609 (1988).
23. M. Tachikawa and M. Yamaguchi, Appl. Phys. Lett. 56, 484 (1990).
24. J.E. Ayers, S.K. Ghandhi and L.J. Schowalter, Mater. Res. Soc. Symp. Proc. 209, 661 (Pittsburgh, PA: Mater. Res. Soc., 1991).
25. J.E. Ayers, L.J. Schowalter and S.K. Ghandhi, J. Cryst. Growth 125, 329 (1992).
26. H. Tatsuoka, H. Kuwubara, Y. Nakanishi and H. Fujiyasu, Thin Solid Films 201, 59 (1991).
27. K. Durose and H. Tatsuoka, Proc. M.S.M. Conf., Oxford, UK (1993).
28. J.E. Ayers, J. Appl. Phys. 78, 3726 (1995).
29. J.S. Speck, M.A. Brewer, G. Beltz, A.E. Romanov and W. Pompe, J. Appl. Phys. 80, 3808 (1996).
30. A.E. Romanov, W. Pompe, G.E. Beltz and J.S. Speck, Appl. Phys. Lett. 69, 3342 (1996).
31. V. Natarajan (unpublished) and J.E. Ayers, dissertation, Rensselaer Polytechnic Institute, Troy, NY (1990).
32. C. Muggelberg, dissertation, Humboldt University, Berlin (1992).
33. J.W. Matthews, A.E. Blakeslee and S. Mader, Thin Solid Films 33, 253 (1976).
34. G. H. Olsen, J. Cryst. Growth 31, 223 (1975).
35. E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii and B.E. Weir, Appl. Phys. Lett. 59, 811 (1991).
36. Y.-H. Xie, E.A Fitzgerald, P.J. Silverman, A.R. Kortan and B.E. Weir, Mater. Sci. Engr. B 14, 332 (1992).
37. J.C.C. Fan, B.-Y. Tsaur, P. Gale and F.M. Davis, U.S. Patent 5,091,333 (1992).
38. M. Sugo, H. Mori, Y. Itoh and Y. Sakai, Ext. Abs. Intl. Conf. on Solid State Devices and Materials, 1992 (unpublished).
39. T. Yamada, M. Tachikawa, T. Sasaki, H. Mori And Y. Kadota, Appl. Phys. Lett. 70, 1614 (1997).
40. E.A. Fitzgerald, G.P. Watson, R.E. Proano, D.G. Ast, P.D. Kirchner, G.D. Pettit and J.M. Woodall, J. Appl. Phys. 65, 2220 (1989).
41. G.P. Watson, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, A.E. White and K.T. Short, Appl. Phys. Lett. 63, 746 (1993).
42. G.P. Watson, M.O. Thompson, D.G. Ast, A. Fischer-Colbrie and J. Miller, J. Electron. Mater. 19, 957 (1990).
43. D. Hull and D.J. Bacon, Introduction to Dislocations, 3rd. Ed. (New York: Pergamon, 1984).
44. P. Haasan, Acta Met. 5, 598 (1957).
45. R. Hull and J.C. Bean, J. Appl. Phys. 66, 5837 (1989).
46. Y.H. Lo, Appl. Phys. Lett. 59, 2311 (1991).
47. D. Teng and Y.H. Lo, Appl. Phys. Lett. 62, 1687 (1993).
48. F.E. Ejeckam, Y.H. Lo, S. Subramanian, H.Q. Hou and B.E. Hammons, Appl. Phys. Lett. 70, 1685 (1997).