Strain relaxation at low misfits: dislocation injection vs. surface roughening

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 325-336

  Perovic, D D ^a   Bahierathan, B ^a   Houghton, D C ^a   Lafontaine, H ^a   Baribeau, J M ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; HETEROJUNCTIONS; MATHEMATICAL MODELS; NUCLEATION; OPTICAL MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION;

ACTIVATION ENERGY BARRIER; DISLOCATION INJECTION; MISFIT DISLOCATION; MORPHOLOGICAL INSTABILITY DIAGRAM; STRAIN RELAXATION MECHANISM; SURFACE ROUGHENING; SURFACE UNDULATION;

STRESS RELAXATION;

EID: 0029702094     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (31)