Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si:H films grown by ion-beam deposition on Si(100) surfaces

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 831-837

  Biener, J ^a   Lutterloh, C ^a   Wicklein, M ^b   Dinger, A ^b   Kuppers J ^a,b  

^a MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

^b UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DECOMPOSITION; HYDROGENATION; ION BEAM ASSISTED DEPOSITION; MASS SPECTROMETRY; PROBABILITY; SILANES; SURFACE TREATMENT; TEMPERATURE PROGRAMMED DESORPTION; THERMODYNAMIC STABILITY; THICK FILMS;

AMORPHOUS HYDROGENATED SILICON; HYDROGEN ATOM; IN SITU MASS SPECTROMETRY; MONOHYDRIDES; TEMPERATURE PROGRAMMED DESORPTION SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 0042736020     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1575213     Document Type: Article

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