A methodology to extract the channel current of permeable gate oxide MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1314-1321

  Palestri, Pierpaolo ^a   Esseni, David ^a   Selmi, Luca ^a   Guegan, George ^b   Sangiorgi, Enrico ^c  

^a UNIVERSITY OF UDINE   (Italy)

^b CEA LETI   (France)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Gate leakage; Mobility extraction; MOSFETs; Parameter extraction; Ultrathin oxide

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PERTURBATION TECHNIQUES;

CHANNEL CURRENT; GATE LEAKAGE; MOBILITY EXTRACTION; PERMEABLE GATE OXIDE; ULTRATHIN OXIDE;

MOSFET DEVICES;

EID: 0042674110     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813245     Document Type: Article

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