SCOPUS 정보 검색 플랫폼

Volumn 440, Issue 1-2, 2003, Pages 169-173

Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure

(8) Kim, Yong Hae a Hwang, Chi Sun a Song, Yoon Ho a Chung, Choong Heui a Ko, Young Wook a Sohn, Choong Yong a Kim, Bong Chul a Lee, Jin Ho a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Dispersion; Excimer laser; Grain; Poly Si; Trap

Indexed keywords

ANNEALING; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; EXCIMER LASERS; LEAKAGE CURRENTS; MOS CAPACITORS; PHONONS; POLYSILICON; RAMAN SPECTROSCOPY;

GATE VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0042622634 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(03)00853-8 Document Type: Article

Times cited : (12)

References (14)

1
- 0001319968
- Brotherton S.D., Ayres J.R., Edwards M.J., Fisher C.A., Glaister C., Gowers J.P., McCullock D.J., Trainor M. Thin Solid Films. 337:1999;188.
- (1999) Thin Solid Films , vol.337 , pp. 188
- Brotherton, S.D.¹ Ayres, J.R.² Edwards, M.J.³ Fisher, C.A.⁴ Glaister, C.⁵ Gowers, J.P.⁶ McCullock, D.J.⁷ Trainor, M.⁸

2
- 0041384056
- Song Y.H., Kang S.Y., Cho K.I., Yoo H.J. ETRI J. 19:1997;26.
- (1997) ETRI J. , vol.19 , pp. 26
- Song, Y.H.¹ Kang, S.Y.² Cho, K.I.³ Yoo, H.J.⁴

3
- 36449004108
- Im J.S., Kim H.J., Thompson M.O. Appl. Phys. Lett. 63:1993;1969.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1969
- Im, J.S.¹ Kim, H.J.² Thompson, M.O.³

4
- 0036539110
- Valletta A., Mariucci L., Fortunato G., Brotherton S.D., Ayres J.R. IEEE Trans. Electron Devices. 49:2002;636.
- (2002) IEEE Trans. Electron Devices , vol.49 , pp. 636
- Valletta, A.¹ Mariucci, L.² Fortunato, G.³ Brotherton, S.D.⁴ Ayres, J.R.⁵

5
- 0036503239
- Lin C.W., Tseng C.H., Chang T.K., Lin C.W., Wang W.T., Cheng H.C. IEEE Electron Devices Lett. 23:2002;133.
- (2002) IEEE Electron Devices Lett. , vol.23 , pp. 133
- Lin, C.W.¹ Tseng, C.H.² Chang, T.K.³ Lin, C.W.⁴ Wang, W.T.⁵ Cheng, H.C.⁶

6
- 84951050944
- d'Aragona F.S. J. Electrochem. Soc. 119:1972;948.
- (1972) J. Electrochem. Soc. , vol.119 , pp. 948
- D'Aragona, F.S.¹

7
- 0035245889
- Higashi S., Ando N., Kamisako K., Sameshima T. Jpn. J. Appl. Phys. 40:2001;731.
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 731
- Higashi, S.¹ Ando, N.² Kamisako, K.³ Sameshima, T.⁴

8
- 0001136975
- Nickel N.H., Lengsfeld P., Sieber I. Phys. Rev. B. 61:2000;15 558.
- (2000) Phys. Rev. B , vol.61 , pp. 15558
- Nickel, N.H.¹ Lengsfeld, P.² Sieber, I.³

9
- 0000887742
- Lengsfeld P., Nickel N.H., Fuhs W. Appl. Phys. Lett. 76:2000;1680.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1680
- Lengsfeld, P.¹ Nickel, N.H.² Fuhs, W.³

10
- 0030574951
- Fork D.K., Anderson G.B., Boyce J.B., Johnson R.I., Mei P. Appl. Phys. Lett. 68:1996;2138.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2138
- Fork, D.K.¹ Anderson, G.B.² Boyce, J.B.³ Johnson, R.I.⁴ Mei, P.⁵

11
- 0030087163
- Son K.S., Yoon H.K., Lee Y.J., Ahn S.J., Kim D.M. Jpn. J. Appl. Phys. 35:1996;892.
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 892
- Son, K.S.¹ Yoon, H.K.² Lee, Y.J.³ Ahn, S.J.⁴ Kim, D.M.⁵

12
- 0036575591
- Chang K.M., Chung Y.H., Lin G.M. IEEE Electron Devices Lett. 23:2002;255.
- (2002) IEEE Electron Devices Lett. , vol.23 , pp. 255
- Chang, K.M.¹ Chung, Y.H.² Lin, G.M.³

13
- 0035249625
- Farmakis F.V., Brini J., Kamarinos G., Dimitriadis C.A. IEEE Electron Devices Lett. 22:2001;74.
- (2001) IEEE Electron Devices Lett. , vol.22 , pp. 74
- Farmakis, F.V.¹ Brini, J.² Kamarinos, G.³ Dimitriadis, C.A.⁴

14
- 0030241288
- Jacunski M.D., Shur M.S., Hack M. IEEE Trans. Electron devices. 43:1996;1433.
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1433
- Jacunski, M.D.¹ Shur, M.S.² Hack, M.³

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