Anomalous variations of OFF-state leakage current in poly-Si TFT under static stress

IEEE Electron Device Letters

Volumn 23, Issue 5, 2002, Pages 255-257

  Chang, Kow Ming ^a,b   Chung, Yuan Hung ^a,b   Lin, Gin Ming ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Impact ionization; OFF state leakage current (I OFF); Poly Si TFT

Indexed keywords

DRAIN POTENTIAL; GATE POTENTIAL; HIGH DRAIN BIAS; OFF STATE LEAKAGE CURRENT; STATIC STRESS;

ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; GATES (TRANSISTOR); GRAIN BOUNDARIES; IMPACT IONIZATION; LEAKAGE CURRENTS; POLYSILICON; STRESSES;

THIN FILM TRANSISTORS;

EID: 0036575591     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.998868     Document Type: Letter

References (9)

1. Analysis of leakage currents in poly-silicon thin film transistors
2. Temperature dependence of the anomalous leakage current in polysilicon-on insulator MOSFETs
3. Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: A correlation between off-current and transconductance variations
4. Mechanism of device degradation in n- and p-channel polysilicon TFTs by electric stressing
5. Device degradation in n- and p-channel polysilicon TFTs as a function of different electric stress configurations
6. Leakage current variation during two different modes of electric stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)
7. Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors
8. Analysis of threshold voltage shift caused by bias stress in low temperature poly-Si TFTs
9. Relation between hot-carrier light emission and kink effect in poly-Si thin film transistors