Hot carrier-induced degradation of gate overlapped lightly doped drain (GOLDD) polysilicon TFTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 636-642

  Valletta, A ^a   Mariucci, Luigi ^a   Fortunato, Guglielmo ^a   Brotherton, S D ^b   Ayres, J R ^b  

^a CNR   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYSILICON; SEMICONDUCTOR DOPING;

POLYSILICON THIN FILM TRANSISTORS (TFT);

THIN FILM DEVICES;

EID: 0036539110     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992873     Document Type: Article

References (19)

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