4H-SiC avalanche photodiode with multistep junction extension termination

Electronics Letters

Volumn 37, Issue 17, 2001, Pages 1080-1081

  Yan, F ^a   Luo, Y ^a   Zhao, J H ^a   Bush, M ^b   Olsen, G H ^b   Weiner, M ^c  

^a RUTGERS UNIVERSITY   (United States)

^b GOODRICH CORPORATION   (United States)

^c UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; PHOTORESISTS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

AVALANCHE PHOTODIODE; LEAKAGE CURRENT DENSITY; MULTISTEP JUNCTION EXTENSION TERMINATION; PHOTO-RESPONSIVITY;

PHOTODIODES;

EID: 0035899213     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010720     Document Type: Article

References (4)

1. 4H-SiC visible blind UV avalanche photodiode
2. GaN avalanche photodiodes
3. Multi-step junction termination extension for SiC power devices
4. Temperature dependence of avalanche breakdown for epitaxial diodes in 4H-SiC