Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 423-430

  Tirino, Louis ^a   Weber, Michael ^a   Brennan, Kevin F ^a   Bellotti, Enrico ^b   Goano, Michele ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Boston University   (United States)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; ENERGY GAP; GALLIUM NITRIDE; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; THERMAL EFFECTS;

PHONON SCATTERINGS;

IMPACT IONIZATION;

EID: 0042341728     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579129     Document Type: Article

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