Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 231-234

  Tirino, Louis ^a   Weber, Michael ^a   Brennan, Kevin F ^a   Bellotti, Enrico ^b   Goano, Michele ^c   Ruden, P Paul ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Boston University   (United States)

^c POLITECNICO DI TORINO   (Italy)

^d University of Minnesota   (United States)

Author keywords

Monte Carlo; phonon scattering

Indexed keywords

BAND STRUCTURE; GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MONTE CARLO METHODS; PHONON SCATTERING; PHONONS; SEMICONDUCTING GALLIUM; SIMULATORS; WIDE BAND GAP SEMICONDUCTORS;

ELECTRON EFFECTIVE MASS; IMPACT IONIZATION COEFFICIENTS; IONIZATION TRANSITIONS; MONTE CARLO MODEL; MONTE CARLO SIMULATORS; NONCUBIC SYMMETRY; NUMERICAL ACCURACY; NUMERICAL INTEGRATIONS;

IMPACT IONIZATION;

EID: 0041356791     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020785710423     Document Type: Article

References (5)

1. Canali C., Jacoboni C., Nava F., Ottaviani G., and Alberigi-Quaranta A. 1975. Phys. Rev. B 12: 2265.
2. Fischetti M.V. 1991. IEEE Trans. Electron. Dev. 38: 634.
3. Fischetti M.V. and Laux S.E. 1988. Phys. Rev. B 38: 9721.
4. Jacoboni C. and Lugli P. 1989. The Monte Carlo Method for Semiconductor Device Simulation. Springer-Verlag, New York.
5. Shichijo H. and Hess K. 1981. Phys. Rev. B 23: 4197.