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Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 594-597

Role of oxygen pressure in growth of CeAIOx thin films on Si by pulsed laser deposition

(4) Yan, L a Kong, L B a Pan, J S b Ong, C K a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CERIUM COMPOUNDS; CURRENT DENSITY; DIELECTRIC PROPERTIES; FILM GROWTH; LEAKAGE CURRENTS; OXYGEN; PRESSURE EFFECTS; PULSED LASER DEPOSITION; SILICON;

ELECTRON HOPPING CONDUCTION;

THIN FILMS;

EID: 0042341679 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1579127 Document Type: Article

Times cited : (4)

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