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Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7532-7535

Reverse current transport mechanism in shallow junctions containing silicide spikes

(4) Chi, D Z a Wang, W D a Chua, S J a Ashok, S b

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b The Pennsylvania State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; PROBABILITY; SCHOTTKY BARRIER DIODES;

REVERSE CURRENT TRANSPORT;

SEMICONDUCTOR JUNCTIONS;

EID: 0037115465 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1521511 Document Type: Article

Times cited : (13)

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