Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 105-107

  Czerwinski, A ^a   Katcki, J ^a   Poyai, A ^b,c   Simoen, E ^b   Claeys, C ^b,c   Ratajczak, J ^a   Gaubas, E ^d  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; INTERDIFFUSION (SOLIDS); LEAKAGE CURRENTS; STATISTICAL METHODS; TRANSMISSION ELECTRON MICROSCOPY;

CATASTROPHIC SPIKING DEFECT; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); GUMMEL NUMBERS; REVERSE CURRENTS;

HETEROJUNCTIONS;

EID: 0035247346     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00148-7     Document Type: Article

References (9)

1. Goto K-.I., Fushida A., Watanabe J., Sukegawa T., Tada Y., Nakamura T., Yamazaki T., Sugii T. IEEE Trans Electron Devices. 46:1999;117.
2. Osburn C.M., Tsai J.Y., Wang Q.F., Rose J., Cowen A. J Electrochem Soc. 140:1993;3660.
3. Chapman R.C., Smith P., Adu R.P., McGuire G.E., Canovai C., Osburn C. J Vac Sci Technol B. 10:1992;1329.
4. La Via F., Rimini E. IEEE Trans Electron Devices. 44:1997;526.
5. Spinella C., D'Arrigo G. J Vac Sci Technol B. 18:2000;576.
6. Simoen E., Claeys C., Czerwinski A., Katcki J. Appl Phys Lett. 72:1998;1054.
7. Poyai A, Simoen E, Claeys C, Gaubas E, Czerwinski A. Proceedings of General Scientific Meeting of the Belgian Physical Society, Namur, Belgium, 19-20 May 1998.
8. Liu R., Williams D.S., Lynch W.T. J Appl Phys. 63:1988;1990.
9. Jones E.C., Cheung N.W. J Vac Sci Technol B. 14:1996;236.