Characterization of shallow silicided junctions for sub-quarter micron ULSI technology - extraction of silicidation induced Schottky contact area

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 762-767

  Lee, Hi Deok ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRON TRAPS; LEAKAGE CURRENTS; MASKS; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

POOLE-FRENKEL BARRIERS; SCHOTTKY CONTACT AREAS; SHALLOW SILICIDED JUNCTIONS;

ULSI CIRCUITS;

EID: 0033885394     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830991     Document Type: Article

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