N+P junction leakage current caused by oxygen precipitation defects and its temperature dependence

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2322-2327

  Uchiyama, Hiroto ^a   Matsumoto, Kei ^a   Mchedlidze, Teimouraz ^a   Nisimura, Masasi ^a   Yamabe, Kikuo ^b  

^a Komatsu Electronic Metals Co Ltd   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC VARIABLES MEASUREMENT; HEAT TREATMENT; LEAKAGE CURRENTS; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SILICON WAFERS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

OXYGEN PRECIPITATION DEFECTS; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR JUNCTIONS;

EID: 0032677057     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391934     Document Type: Article

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