Reduction of carrier depletion in p+ polysilicon gates using laser thermal processing

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 360-362

  Chong, Y F ^a   Gossmann, H J L ^b   Thompson, M O ^c   Pey, K L ^a,d   Wee, A T S ^a   Talwar, S ^e   Chan, L ^f  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b AXCELIS TECHNOLOGIES   (United States)

^c School of Chemical and Molecular Engineering   (United States)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e Verdant Technologies   (United States)

^f CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Boron penetration; Laser thermal processing; Poly depletion

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTALLIZATION; DEGRADATION; INTERFACES (MATERIALS); MOS DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES;

BORON PENETRATION; CARRIER DEPLETION; LASER THERMAL PROCESSING;

POLYSILICON;

EID: 0042173080     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812578     Document Type: Article

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