Characteristics of ultrathin SiO2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1004-1008

  Cho, M H ^a   Shin, J S ^a   Roh, Y S ^a   Lyo, I W ^a   Jeong, K ^a   Whang, C N ^a   Lee, J S ^b   Yoo, J Y ^b   Lee, N I ^b   Fujihara, K ^b   Moon, Dae Won ^c  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; DIELECTRIC PROPERTIES OF SOLIDS; INTERFACES (MATERIALS); PLATINUM; RELIABILITY; SCANNING TUNNELING MICROSCOPY; STRAIN; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; THERMOOXIDATION; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY RAPID THERMAL OXIDATION; INTERFACIAL STRAIN; WET OXIDATION;

SILICA;

EID: 0042030958     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1582455     Document Type: Article

References (16)

1. Y. Tu and J. Tersoff, Phys. Rev. Lett. 84, 4393 (2000).
2. A. Kurokawa, K. Nakamura, S. Ichimura, and D. W. Moon, Appl. Phys. Lett. 76, 493 (2000).
3. H. Fukuda, M. Yasuda, and T. Iwabuchi, Appl. Phys. Lett. 61, 693 (1992).
4. A. Ourmazd, D. W. Taylor, and J. A. Rentschler, Phys. Rev. Lett. 59, 213 (1987).
5. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, and J. A. Yarmoff, Phys. Rev. B 38, 6084 (1988).
6. E. Hasegawa, A. Ishitani, K. Akimoto, M. Tsukiji, and N. Ohta, J. Electrochem. Soc. 142, 273 (1995).
7. D. Eseni, J. D. Bude, and L. Selmi, IEDM 00, 339 (2000).
8. H. Watanabe, T. Babe, and M. Ichikawa, J. Appl. Phys. 85, 6704 (1999).
9. L. Lai and E. A. Irene, J. Appl. Phys. 87, 1159 (2000).
10. Y. H. Ha, S. Kim, S. Y. Lee, J. H. Kim, D. H. Baek, H. K. Kim, and D. W. Moon, Appl. Phys. Lett. 74, 3510 (1999).
11. S. Banerjee, Y. J. Park, D. R. Lee, Y. H. Jeong, K.-B. Lee, S. B. Yoon, B. H. Jo, H. M. Choi, and W.-J. Cho, Appl. Phys. Lett. 72, 433 (1998).
12. Y. P. Kim, S. K. Choi, H. K. Kim, and D. W. Moon, Appl. Phys. Lett. 71, 3504 (1997).
13. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
14. M. T. Sieger, D. A. Luh, T. Miller, and T.-C. Chiang, Phys. Rev. Lett. 77, 2758 (1996).
15. H. Abe, F. Kiyosumi, K. Yoshioka, and M. Ino, IEEE IEDM 85, 372 (1985).
16. J. C. Lee, I.-C. Chen, and C. Hu, IEEE Trans. 35, 2268 (1988).