Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

Applied Physics Letters

Volumn 74, Issue 23, 1999, Pages 3510-3512

  Ha, Yong Ho ^a   Sehun, Kim ^a   Lee, Sun Young ^b   Kim, Jin Ho ^b   Baek, Doo Hyun ^b   Kim, Hyun Kyung ^c   Moon, Dae Won ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001366250     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124146     Document Type: Article

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