Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1048-1054

  Alpuim, P ^a   Chu, V ^a   Conde, J P ^b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; NANOSTRUCTURED MATERIALS; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYETHYLENE TEREPHTHALATES; RAMAN SPECTROSCOPY; SEMICONDUCTING GLASS; SEMICONDUCTOR DOPING; SUBSTRATES;

HYDROGENATED AMORPHOUS SILICON; ISOCHRONAL ANNEALING; NANOCRYSTALLINE FILM; NANOCRYSTALLINE SILICON; RADIO-FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 0042030920     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1586275     Document Type: Article

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