Interface manipulation in GaxIn1-xAs/InP multiple-layer structures grown by chemical beam epitaxy

Semiconductor Science and Technology

Volumn 12, Issue 8, 1997, Pages 974-980

  Rongen, R T H ^a   Van Rijswijk, A J C ^a   Leys, M R ^a   Van Es, C M ^a   Vonk, H ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

GROWTH INTERRUPTION SEQUENCE (GIS);

HETEROJUNCTIONS;

EID: 0031213042     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/8/008     Document Type: Article

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