Trimming the size of InAs/InP quantum dots grown by CBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 396-399

  Poole, P J ^a   Williams, R L ^a   Lefebvre, J ^a   McCaffrey, J P ^a   Rowell, N ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE;

CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033689571     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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