-
1
-
-
33646388736
-
-
"Circuit element utilizing semiconductor material," U.S. Patent 2269347, Sept. 25
-
W. Shockley, "Circuit element utilizing semiconductor material," U.S. Patent 2269347, Sept. 25, 1951.
-
(1951)
-
-
Shockley, W.1
-
2
-
-
84938006654
-
Theory of a wide-gap emitter for transistors
-
H. Kroemer, "Theory of a wide-gap emitter for transistors," Proc. IRE, vol. 45, p. 1535, 1957.
-
(1957)
Proc. IRE
, vol.45
, pp. 1535
-
-
Kroemer, H.1
-
3
-
-
0000291341
-
Quasi-electric and quasi-magnetic fields in a nonuniform semiconductor
-
_, "Quasi-electric and quasi-magnetic fields in a nonuniform semiconductor," RCA Rev., vol. 28, p. 332, 1957.
-
(1957)
RCA Rev.
, vol.28
, pp. 332
-
-
-
5
-
-
33646390159
-
-
"Semiconductor laser with electric pumping," U.S. Patent 3 309 553, (Filed Aug. 16, 1963)
-
H. Kroemer, "Semiconductor laser with electric pumping," U.S. Patent 3 309 553, (Filed Aug. 16, 1963) 1967.
-
(1967)
-
-
Kroemer, H.1
-
6
-
-
0001234492
-
A characteristic feature of injection into heterojunctions
-
Z. I. Alferov, V. B. Khalfin, and R. F. Kazarinov, "A characteristic feature of injection into heterojunctions," Fiz. Tverd. Tela, vol. 8, pp. 3102-3105, 1966.
-
(1966)
Fiz. Tverd. Tela
, vol.8
, pp. 3102-3105
-
-
Alferov, Z.I.1
Khalfin, V.B.2
Kazarinov, R.F.3
-
8
-
-
0001019819
-
+) structure with heterojunctions
-
+) structure with heterojunctions," Fiz. Tekh. Poluprovodn., vol. 1, pp. 436-438, 1966.
-
(1966)
Fiz. Tekh. Poluprovodn.
, vol.1
, pp. 436-438
-
-
Alferov, Z.I.1
-
9
-
-
0012079336
-
-
[Sov. Phys. Semicond., vol. 1, p. 358-361, 1967].
-
(1967)
Sov. Phys. Semicond.
, vol.1
, pp. 358-361
-
-
-
10
-
-
0001081864
-
1-x As crystalls
-
1-x As crystalls," Fiz. Tekh. Poluprovodn., vol. 1, pp. 1579-1581, 1967.
-
(1967)
Fiz. Tekh. Poluprovodn.
, vol.1
, pp. 1579-1581
-
-
Alferov, Z.I.1
Andreev, V.M.2
Korol'kov, V.I.3
Tret'ya-kov, D.N.4
Tuchkevich, V.M.5
-
11
-
-
33646411298
-
-
[Sov. Phys. Semicond., vol. 1, p. 1313-1314, 1968].
-
(1968)
Sov. Phys. Semicond.
, vol.1
, pp. 1313-1314
-
-
-
13
-
-
0001260596
-
1-xAs-p-GaAs heterojunctions
-
1-xAs-p-GaAs heterojunctions," Fiz. Tekh. Poluprovodn., vol. 2, pp. 1016-1017, 1968.
-
(1968)
Fiz. Tekh. Poluprovodn.
, vol.2
, pp. 1016-1017
-
-
Alferov, Z.I.1
Andreev, V.M.2
Korol'Kov, V.I.3
Portnoi, E.L.4
Tret'Yakov, D.N.5
-
14
-
-
3843061320
-
-
[Sov. Phys.-Semicond., vol. 2, p. 843-844, 1969].
-
(1969)
Sov. Phys.-Semicond.
, vol.2
, pp. 843-844
-
-
-
15
-
-
0000496324
-
Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system
-
_, "Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system," Fiz. Tekh. Poluprovodn., vol. 2, pp. 1545-1547, 1968.
-
(1968)
Fiz. Tekh. Poluprovodn.
, vol.2
, pp. 1545-1547
-
-
-
16
-
-
10844295488
-
-
[Sov. Phys.-Semicond., vol. 2, p. 1289-1291, 1969].
-
(1969)
Sov. Phys.-Semicond.
, vol.2
, pp. 1289-1291
-
-
-
17
-
-
0001662003
-
Recombination radiation in epitaxial structures in the system AlAs-GaAs
-
Moscow, July 23-29, 1968. [in Russian]. (Leningrad: Nauka)
-
_, "Recombination radiation in epitaxial structures in the system AlAs-GaAs," in Proc. 9th Int. Conf. on Semiconductor Structures, vol. 1, Moscow, July 23-29, 1968, pp. 534-540. [in Russian]. (Leningrad: Nauka, 1969).
-
(1969)
Proc. 9th Int. Conf. on Semiconductor Structures
, vol.1
, pp. 534-540
-
-
-
19
-
-
0000941948
-
1-xAs solid solutions with variable forbidden gap
-
1-xAs solid solutions with variable forbidden gap," Fiz. Tekh. Poluprovodn., vol. 3, pp. 1054-1057, 1969.
-
(1969)
Fiz. Tekh. Poluprovodn.
, vol.3
, pp. 1054-1057
-
-
Alferov, Z.I.1
Garbuzov, D.Z.2
Morozov, E.P.3
Portnoi, E.L.4
-
20
-
-
33646411813
-
-
[Sov. Phys.-Semicond., vol. 3, pp. 885-887, 1970].
-
(1970)
Sov. Phys.-Semicond.
, vol.3
, pp. 885-887
-
-
-
21
-
-
0001450189
-
1-xAs solid solutions with variable forbidden gap
-
1-xAs solid solutions with variable forbidden gap," Fiz. Tekh. Poluprovodn., vol. 3, pp. 541-545, 1969.
-
(1969)
Fiz. Tekh. Poluprovodn.
, vol.3
, pp. 541-545
-
-
Alferov, Z.I.1
Andreev, V.M.2
Korol'Kov, V.I.3
Portnoi, E.L.4
Yakovenko, A.A.5
-
22
-
-
84884591429
-
-
[Sov. Phys.-Semicond., vol. 3, pp. 460-463, 1970].
-
(1970)
Sov. Phys.-Semicond.
, vol.3
, pp. 460-463
-
-
-
23
-
-
0000137626
-
AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold
-
Z. I. Alferov, V. M. Andreev, E. L. Portnoy, and M. K. Trukan, "AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold," Fiz. Tekh. Poluprovodn., vol. 3, pp. 1328-1332, 1969.
-
(1969)
Fiz. Tekh. Poluprovodn.
, vol.3
, pp. 1328-1332
-
-
Alferov, Z.I.1
Andreev, V.M.2
Portnoy, E.L.3
Trukan, M.K.4
-
24
-
-
0001534148
-
-
(Sov. Phys. Semicond., vol. 3, pp. 1107-1110, 1970].
-
(1970)
Sov. Phys. Semicond.
, vol.3
, pp. 1107-1110
-
-
-
25
-
-
0000137627
-
Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions
-
Z. I. Alferov, V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and A. A. Yakovenko, "Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions," Fiz. Tekh. Poluprovodn., vol. 3, pp. 930-933, 1969.
-
(1969)
Fiz. Tekh. Poluprovodn.
, vol.3
, pp. 930-933
-
-
Alferov, Z.I.1
Andreev, V.M.2
Korol'Kov, V.I.3
Portnoi, E.L.4
Yakovenko, A.A.5
-
26
-
-
33646434862
-
-
[Sov.-Phys. Semicond., vol. 3, pp. 785-787, 1970].
-
(1970)
Sov.-Phys. Semicond.
, vol.3
, pp. 785-787
-
-
|