Development of silicon single-electron devices

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 19, Issue 1-2, 2003, Pages 95-101

  Takahashi, Yasuo ^a   Ono, Yukinori ^a   Fujiwara, Akira ^a   Inokawa, Hiroshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; LOGIC CIRCUITS; OXIDATION; SILICON;

SINGLE-ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0042009654     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(03)00314-X     Document Type: Conference Paper

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