Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 79, Issue 22, 2001, Pages 3618-3620

  Inokawa, Hiroshi ^a   Fujiwara, Akira ^a   Takahashi, Yasuo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035956121     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421085     Document Type: Article

References (12)

1. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
2. J. R. Tucker, J. Appl. Phys. 72, 4399 (1992).
3. M. A. Kastner, Rev. Mod. Phys. 64, 849 (1992).
4. H. Sunamura, T. Sakamoto, Y. Nakamura, H. Kawaura, J. S. Tsai, and T. Baba, Appl. Phys. Lett. 74, 3555 (1999).
5. S. J. Ahn and D. M. Kim, Electron. Lett. 34, 172 (1998).
6. A. C. Seabaugh, Y.-C. Kuo, and H.-T. Yuan, IEEE Electron Device Lett. 13, 479 (1992).
7. T. Waho and M. Yamamoto, Proceedings of the 27th International Symposium on Multiple-Valued Logic 35, 1997.
8. L. Micheel, Proceedings of the 22nd International Symposium on Multiple-Valued Logic 18, 1992.
9. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995).
10. Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase, and K. Murase, IEEE Trans. Electron Devices 43, 1213 (1996).
11. A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase, Jpn. J. Appl. Phys., Part 1 37, 3257 (1998).
12. C. Wasshuber, H. Kosina, and S. Selberherr, IEEE Trans. Comput.-Aided Des. 16, 937 (1997).