Characterization of ultrathin insulating Al2O3 films grown on Nb(110)/sapphire(0001) by tunneling spectroscopy and microscopy

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1478-1484

  Dietrich, Ch ^a   Boyen, H G ^a   Koslowski, B ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; EPITAXIAL GROWTH; MIM DEVICES; NIOBIUM COMPOUNDS; OXIDATION; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

TUNNELING SPECTROSCOPY;

ULTRATHIN FILMS;

EID: 0041932365     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586984     Document Type: Article

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