JFET front-end circuits integrated in a detector-grade silicon substrate

IEEE Transactions on Nuclear Science

Volumn 50, Issue 4 II, 2003, Pages 942-947

  Manghisoni, Massimo ^a,b   Ratti, Lodovico ^a,c   Re, Valerio ^a,b   Speziali, Valeria ^a,c   Traversi, Gianluca ^a,c   Dalla Betta, Gian Franco ^d,e   Boscardin, Maurizio ^d   Batignani, Giovanni ^f,g   Giorgi, Marcello ^f,g   Bosisio, Luciano ^h,i  

^a INFN SEZIONE DI PAVIA   (Italy)

^b UNIVERSITY OF BERGAMO   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

^d ITC IRST   (Italy)

^e UNIVERSITY OF TRENTO   (Italy)

^f INFN SEZIONE DI PISA   (Italy)

^g UNIVERSITY OF PISA   (Italy)

^h SEZIONE DI TRIESTE   (Italy)

ⁱ UNIVERSITY OF TRIESTE   (Italy)

Author keywords

Charge preamplifiers; High resistivity substrate; Integrated sensors; Radiation hardness

Indexed keywords

FIELD EFFECT TRANSISTORS; GAMMA RAYS; RADIATION HARDENING;

CHARGE PREAMPLIFIERS;

RADIATION DETECTORS;

EID: 0041926405     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.815177     Document Type: Conference Paper

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