A fabrication process for silicon microstrip detectors with integrated front-end electronics

IEEE Transactions on Nuclear Science

Volumn 49 II, Issue 3, 2002, Pages 1022-1026

  Dalla Betta, Gian Franco ^a,b   Boscardin, Maurizio ^b   Gregori, Paolo ^b   Zorzi, Nicola ^b   Pignatel, Giorgio U ^c,d   Batignani, Giovanni ^e   Giorgi, Marcello ^e   Bosisio, Luciano ^f   Ratti, Lodovico ^g   Speziali, Valeria ^g   Re, Valerio ^h  

^a IEEE   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF TRENTO   (Italy)

^d UNIVERSITY OF PERUGIA   (Italy)

^e UNIVERSITY OF PISA   (Italy)

^f UNIVERSITY OF TRIESTE   (Italy)

^g UNIVERSITY OF PAVIA   (Italy)

^h UNIVERSITY OF BERGAMO   (Italy)

Author keywords

Fabrication technology; Integrated electronics; Microstrip detectors

Indexed keywords

INTEGRATED COUPLING CAPACITORS; INTEGRATED ELECTRONICS; INTEGRATED FRONT-END ELECTRONICS; POLYSILICON RESISTORS; SILICON MICROSTRIP DETECTORS;

CAPACITORS; FABRICATION; INTEGRATED CIRCUITS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MICROELECTRONICS; MICROSTRIP DEVICES; MOSFET DEVICES; POLYSILICON; RESISTORS;

SILICON SENSORS;

EID: 0036624321     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039608     Document Type: Article

References (13)

1. P. Lechner et al., "Silicon drift detectors for high count rate X-ray spectroscopy at room temperature," Nucl. Instrum. Methods, vol. A458, pp. 281-287, 2001.
2. W. Neeser et al., "The DEPFET pixel bioscope," IEEE Trans. Nucl. Sci., vol. 47, no. 3, pp. 1246-1250, 2000.
3. G. F. Dalla Betta et al., "Silicon PIN radiation detectors with on-chip front-end junction field effect transistors," Nucl. Instrum. Methods, vol. A417, pp. 325-331, 1998.
4. A. Fazzi, G. U. Pignatel, G. F. Dalla Betta, M. Boscardin, V. Varoli, and G. Verzellesi, "Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET," IEEE Trans. Nucl. Sci., vol. 47, no. 3, pp. 829-833, 2000.
5. G. F. Dalla Betta, G. U. Pignatel, G. Verzellesi, M. Boscardin, A. Fazzi, and L. Bosisio, "Monolithic integration of PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy," Nucl. Instrum. Methods, vol. A458, pp. 275-280, 2001.
6. G. F. Dalla Betta, et al., "Feasibility studies of microelectrode silicon detectors with integrated electronics," Nucl. Instrum. Methods, vol. A478, pp. 372-376, 2002.
7. M. Manghisoni, L. Ratti, V. Re, and V. Speziali, "Integrated front-end electronics in a detector compatible process: Source-follower and charge-sensitive preamplifier configuration," in Proc. SPIE Hard X-Ray and Gamma-Ray Detector Physics III, vol. 4507, R. B. James, Ed., 2001, pp. 141-151.
8. S. M. Sze, VLSI Technology. Singapore: McGraw-Hill, 1983, pp. 107-116.
9. G. F. Dalla Betta, M. Boscardin, L. Bosisio, I. Rachevskaia, M. Zen, and N. Zorzi, "Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors," Nucl. Instrum. Methods, vol. A460, pp. 304-313, 2001.
10. F. S. Goulding, J. T. Walton, and R. H. Pehl, "Recent results on the optoelectronic feedback amplifier," IEEE Trans. Nucl. Sci., vol. NS-17, no. 1, pp. 218-222, 1970.
11. C. Fiorini and P. Lechner, "Continuous charge restoration in semiconductor detectors by means of the gate-to-drain current of the integrated front-end JFET," IEEE Trans. Nucl. Sci., vol. 46, no. 3, pp. 761-764, 1999.
12. G. Bertuccio, A. Pullia, and G. De Geronimo, "Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping time for X- and γ-ray spectroscopy," Nucl. Instrum. Methods, vol. A380, pp. 301-307, 1996.
13. G. Batignani et al., "Characterization of MOS transistors integrated on high-resistivity silicon with a DSSD process," Il Nuovo Cimento, vol. 110A, pp. 817-827, 1997.