Feasibility studies of microelectrode silicon detectors with integrated electronics

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 478, Issue 1-2, 2002, Pages 372-376

  Dalla Betta, G F ^a   Batignani, G ^b   Bettarini, S ^b   Boscardin, M ^a   Bosisio, L ^c   Carpinelli, M ^b   Dittongo, S ^c   Forti, F ^b   Giorgi, M ^b   Gregori, P ^a   Lusiani, A ^d   Manghisoni, M ^e   Pignatel, G U ^f   Rama, M ^b   Ratti, L ^e   Re, V ^g   Sandrelli, F ^b   Speziali, V ^e   Svelto, F ^e   Zorzi, N ^a  

^a ITC IRST   (Italy)

^b UNIVERSITY OF PISA   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d SCUOLA NORMALE SUPERIORE   (Italy)

^e UNIVERSITY OF PAVIA   (Italy)

^f UNIVERSITY OF TRENTO   (Italy)

^g UNIVERSITY OF BERGAMO   (Italy)

Author keywords

Biopolar transistors; Electrical characterisation; Fabrication technology; Field effect devices; Silicon microstrip detectors

Indexed keywords

ELECTRIC CONDUCTIVITY; FABRICATION; HIGH ENERGY PHYSICS; INTEGRATED OPTOELECTRONICS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MICROELECTRODES; MICROSTRIP DEVICES; SEMICONDUCTING SILICON; SUBSTRATES;

SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0036475544     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01777-6     Document Type: Conference Paper

References (5)