Design and characterization of integrated front-end transistors in a micro-strip detector technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 485, Issue 1-2, 2002, Pages 193-198

  Simi, G ^a   Angelini, C ^a   Batignani, G ^a   Bettarini, S ^a   Bondioli, M ^a   Boscardin, M ^b   Bosisio, L ^c   Dalla Betta, G F ^b   Dittongo, S ^c   Forti, F ^a   Giorgi, M ^a   Gregori, P ^b   Manghisoni, M ^d   Morganti, M ^a   U Pignatel, G ^e   Ratti, L ^d   Re, V ^f   Rizzo, G ^a   Speziali, V ^d   Zorzi, N ^b  

^a UNIVERSITY OF PISA   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d UNIVERSITY OF PAVIA   (Italy)

^e UNIVERSITY OF TRENTO   (Italy)

^f UNIVERSITY OF BERGAMO   (Italy)

Author keywords

Bipolar transistors; Electrical characterization; Fabrication technology; Field effect devices; Silicon micro strip detectors

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CONDUCTIVITY; FIELD EFFECT SEMICONDUCTOR DEVICES; HIGH ENERGY PHYSICS; PARTICLE DETECTORS; RADIATION HARDENING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES;

SILICON MICRO-STRIP DETECTORS;

MICROSTRIP DEVICES;

EID: 14244271336     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(02)00554-5     Document Type: Conference Paper

References (3)