Relaxation and recombination in ultrasmall InAs quantum dots

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 363-366

  Bogani, F ^a   Carraresi, L ^a   Mattolini, R ^a   Colocci, M ^a   Bosacchi, A ^b   Franchi, S ^b  

^a UNIVERSITY OF FLORENCE   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON EMISSION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NEODYMIUM LASERS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

CARRIER RELAXATION; ELECTRONIC TRANSITIONS; INDIUM ARSENIDE; NEODYMIUM YTTRIUM ALUMINUM GARNET LASER; OPTICAL EXCITATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029701265     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00329-0     Document Type: Article

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