Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1284-1289

  Low, Tony ^a   Hou, Yong Tian ^a   Li, Ming Fu ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Hole quantization; Improved one band; MOSFET; Self consistent

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; ELECTROSTATICS; HAMILTONIANS; HOLE MOBILITY; MOSFET DEVICES; PARTIAL DIFFERENTIAL EQUATIONS; POISSON EQUATION; QUANTUM THEORY;

EFFECTIVE MASS APPROXIMATION; HOLE QUANTIZATION; SCHRODINGER EQUATION; TRIANGULAR WELL APPROXIMATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0041672304     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813469     Document Type: Article

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