A new SONOS memory using source-side injection for programming

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 253-255

  Chang, Kuo Tung ^a   Chen, Wei Ming ^a   Swift, Craig ^a   Higman, Jack M ^a   Paulson, Wayne M ^a   Chang, Ko Min ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING; EFFICIENCY; ELECTRON TUNNELING; NITRIDES; OXIDES; SEMICONDUCTING SILICON;

HIGH-SPEED PROGRAMMING;

SEMICONDUCTOR STORAGE;

EID: 0032123105     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701434     Document Type: Article

References (10)

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4. T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, and T. Tsuchiya, "A 1 Mbit EEPROM with MONOS memory cell for semiconductor disk application," in Symp. VLSI Circuits, 1990, pp. 101-102.
5. F. R. Libsch and M. H. White, "Charge transport and storage of low programming voltage SONOS/MONOS memory devices," Solid State Electron., vol. 33, no. 1, pp. 105-126, 1990.
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9. Y. Ma, C. Pang, J. Pathak, S. Tsao, C. Chang, Y. Yamauchi, and M. Yoshimi, "A novel high density contactless flash memory array using split-gate source-side injection cell for 5 V-only applications," in Symp. VLSI Technol., 1994, p. 49.
10. J. A. Appels, E. Kooi, M. M. Paffens, J. J. H. Schatorje, and W. H. C. G. Verkuylen, "Local oxidation of silicon and its application in semiconductor device technology," Philips J. Res., vol. 25, p. 118, 1970.