Irradiation effects in InGaAs/InAlAs high electron mobility transistors

Applied Physics Letters

Volumn 79, Issue 14, 2001, Pages 2279-2281

  Jackson, E M ^a   Weaver, B D ^b   Shojah Ardalan, S ^c   Wilkins, R ^c   Seabaugh, A C ^d   Brar, B ^e  

^a SFA INC   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c PRAIRIE VIEW A AND M UNIVERSITY   (United States)

^d UNIVERSITY OF NOTRE DAME   (United States)

^e ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040028553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1408904     Document Type: Article

References (17)

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