Impact of high energy particles on ingap/ingaas pseudomorphic hemts

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2861-2866

  Ohyama, H ^a   Simoen, E ^a   Kuroda, S ^a   Claeys, C ^a   Takami, Y ^a   Hakata, T ^a   Sunaga, H ^a  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTRON GAS; ELECTRON IRRADIATION; ELECTRON SCATTERING; RADIATION DAMAGE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THRESHOLD VOLTAGE;

ISOCHRONAL THERMAL ANNEALING; NONIONIZING ENERGY LOSS (NIEL);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032306856     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736540     Document Type: Article

References (12)

1. T. Mimura, S. Hiyamizu, T. Fujii and K. Nanbu, "Anew field effect transistor with selectivity doped GaAs/N-Alx Gai.xAsheterojunction", Japan J. Appl. Phys., vol. 19, pp. L225-227, 1980.
2. S. Kuroda,H. Suehiro, T. Miyata, S. Asai, I. Hanyu, M. Shima, N. Hara and M. Takikawa, "0.25m gate length N-InGaP/InGaAs/GaAs HEMT DCEL circuit with lower power dissipation than high-speed Si CMOS circuit", ffiDMTech. Dig., pp. 323-326,1992
3. M. Takikawa and K. Joshin, "Pseudomorphic NInGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers", IEEE Trans. Electron Devices vol. 14, .No. S, pp. 406-408, August, 1993.
4. M. J. O'Loughlin, "Radiation effects in high electron mobility transistors : total dose gamma irradiation", IEEE Trans. Nucl. Sei., Vol.34, No. 8, pp. 1808-1812, August, 1987.
5. K. Matsuzaki, N. Nemoto, E. Nakamura, T. Akutsu, S. Matsuda, K. Yajima, H. Sasaki, M. Komura, T. Katoh, T. Kashiwa, T. Asano and K. Mizuguchi, "Radiation hardness of pseudomorphic IIEMT and dual-gate MESFET MMICs", to be published in proceeding of 4th European conderence RADiation and their Effects on
6. Components and Systems (RADECS), Cannes, France, Sept. 15-19,1997.
7. H. Kara, K. Natori and S. Horiuchi , "Behavior theory of MOS transitors", Kindai Kagakusha, Tokyo 1980.
8. S. Glaslone and M. Edlard, "The elements of nuclear theory", Van Nerthrand Company, New York 1952.
9. G. H. Kichin and R. S. Pease, "Displacement of atoms in solids by radiation", Kept. Progress in Phys. Vol. 1, pp.1, 1955.
10. H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, T. Kudou,T. Hakata, S. Kohiki andH. Sunaga, "Degradation and recovery of Ino.53Gao.47As photodiodes by 1-MeV fast neutrons ", IEEE Trans. Nucl. Sei., Vol. 43, No. 6, pp. 3019-3026, December 1996.
11. G. P. Summers, E. A. Burke, P, Shapiro, S. C. Messenger and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton radiations", IEEE Trans. Nucl. Sei., Vol. 40, No. 6, pp. 1372-1379, 1993.
12. T. Kudou, H. Ohyama, E. Simoen, C. Claeys, Y. Takami, K. Shigaki, A. Fujii and H. Sunaga, "Radiation damage of InGaAs photodiodes by high energy particles", proceeding of the Materials Research Society 1997 Fall Meeting, Boston USA, 487,471 (1998).