High performance MMICs with submillimeter wave InP-based HEMTs

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 67-70

  Pobanz, C ^a   Matloubian, M ^a   Radisic, V ^a   Raghavan, G ^a   Case, M ^a   Micovic, M ^a   Hu, M ^a   Nguyen, C ^a   Weinreb, S ^a,b   Samoska, L ^a,b  

^a Hughes Aircraft Co   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ALUMINUM ARSENIC ANTIMONIDE; INDIUM ALUMINUM ARSENIDE;

BROADBAND AMPLIFIERS; FREQUENCY DIVIDING CIRCUITS; GATES (TRANSISTOR); MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033705082     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2000.850232     Document Type: Article

References (11)

1. P. M. Smith, "Status of InP HEMT Technology for Microwave Receiver Applications," IEEE Trans. Microwave Theory Tech., vol. 44, no. 12, Dec 1996, pp. 2328-2333.
2. M. Matloubian, C. Pobanz, D. Docter, M. Case, M. Micovic, C. Nguyen, M. Yu and M. Lui, "Submillimeter wave InP-based HEMTs with fmax over 600 GHz," OSA Trends in Optics and Photonics Vol. 28, Ultrafast Electronics and Optoelectronics (Optical Society of America, Washington, DC 1999), pp. 2-4.
3. C. W. Pobanz, M. Matloubian, M. Lui, H.-C. Sun, M. Case, C. M. Ngo, P. Janke, T. Gaier and L. Samoska, "A High-Gain Monolithic D-band InP HEMT Amplifier," IEEE J. Solid State Circuits, vol. 34, no. 9, Sep 1999, pp. 1219-1224.
4. M. G. Case, C. Pobanz, S. Weinreb, M. Matloubian, M. Hu, M. Wetzel, P. Janke and C. Ngo, "Low-Cost, High-Performance W-Band LNA MMICs for Millimeter-Wave Imaging," Proceedings of SPIE Vol. 4032, Passive Millimeter-Wave Imaging Technology IV, Apr 2000.
5. th Intl. Conf on Indium Phosphide and Related Materials, May 1999, pp. 423-425.
6. C. Pobanz et al., to be published.
7. V. Radisic, S. Weinreb, M. Micovic, M. Hu, P. Janke, C. Ngo, D. Harvey, and M. Matloubian, " A Ultra Broadband Low Power MMIC Amplifier," submitted to the 30th European Microwave Conference, Paris, Oct 2000.
8. G. Raghavan et al., to be published.
9. T. Enoki, Y. Umeda, K. Osafune, H. Ito, and Y. Ishii, " Ultra-High-speed InAlAs/InGaAs HEMT ICs using pn-Level-Shift Diodes," 1995 Intl. Electron Devices Meeting, pp. 193-196.
10. 0.16 high electron. mobility transistors on InP substrate," Electronics Letters, vol.36, no. 4, 17 Feb 2000, pp. 357-358.
11. max" IEEE Electron Device Letters, vol. 15, no. 11, NOV 1994, pp. 477-479.