Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 79-85

  Ohyama, H ^a   Simoen, E ^b   Kuroda, S ^c   Claeys, C ^b   Takami, Y ^d   Hakata, T ^a   Kobayashi, K ^a   Nakabayashi, M ^a   Sunaga, H ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c FUJITSU LABORATORIES LTD   (Japan)

^d RIKKYO UNIVERSITY   (Japan)

^e TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CRYSTAL DEFECTS; DEGRADATION; IRRADIATION; MASS TRANSFER; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THRESHOLD VOLTAGE;

HIGH-ENERGY PARTICLES; NUCLEAR COLLISIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035147756     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00073-1     Document Type: Article

References (14)

1. Mimura T., Hiyamizu S.et al. Jpn J Appl Phys. 19:1980;225.
2. Kuroda S, Suehiro H, et al. IEDM Tech Dig 1992:323.
3. Takikawa M., Joshin K. IEEE Trans Electron Dev. 14:1993;406.
4. Fleetwood, Winokur, et al. Microelectron Reliab 2000;40:17.
5. O'Loughlin M.J. IEEE Trans Nucl Sci. 34:1987;1808.
6. Matsuzaki K, Nemoto N, et al. In: Proceeding of the Fourth European Conference Radiation and Their Effects on Components and Systems, RADECS '97. 1997:114.
7. Ohyama H., Vanhellemont J.et al. IEEE Trans Nucl Sci. 43:1996;3019.
8. Ohyama H., Simoen E.et al. IEEE Trans Nucl Sci. 45:1998;2861.
9. Shaw G.J., Walters R.J.et al. J Appl Phys. 73:1993;7244.
10. Barnes C.E. J Appl Phys. 50:1979;5242.
11. Forrest S.R., Kim O.K. J Appl Phys. 53:1982;5738.
12. Glastone S, Edlard M. The elements of nuclear theory. New York: Van Nostrand Reinhold, 1952.
13. Kichin G.H., Pease R.S. Rept Prog Phys. 1:1955;1.
14. Summers G.P., Burke E.A., Shapiro P., Messenger S.C., Walters R.J. IEEE Trans Nucl Sci. 40:1993;1372.