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1
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0029519984
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Ultrahigh-spccd InAIAs/InGaAs HEMTs ICs using pnlaycr-shift diodes
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T Enoki, Y Umcda, K Osafunc, H Ito, and Y IshiiUltrahigh-spccd InAIAs/InGaAs HEMTs ICs using pnlaycr-shift diodes1995 IEEE Int Electron Device Meeting Tech Dig , Washington, 193-190 1995
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(1995)
1995 IEEE Int Electron Device Meeting Tech Dig , Washington
, pp. 193-1190
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Enoki, T.1
Umcda, Y.2
Osafunc, K.3
Ito, H.4
Ishii, Y.5
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2
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0031200699
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G4Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs
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Aug
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T Otsuji, Y Yoneyama, Y Imai, T Enoki, and Y UmedaG4Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTsElectron Lett , vol 33, 17, 1488-1489, Aug1997
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(1997)
Electron Lett
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, Issue.17
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Otsuji, T.1
Yoneyama, Y.2
Imai, Y.3
Enoki, T.4
Umeda, Y.5
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3
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0031200104
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A 4G-Gb/s super-dynamic decision circuit module using InAIAs/InGaAs HEMTs
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M Yoneyama, T Otsuji, Y Imai, S Yamaguchi, T Enoki, Y Umeda, and K HagimotoA 4G-Gb/s super-dynamic decision circuit module using InAIAs/InGaAs HEMTsElectron Lett , vol 33, 17, 1472-1473 1997
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(1997)
Electron Lett
, vol.33
, Issue.17
, pp. 1472-1473
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Yoneyama, M.1
Otsuji, T.2
Imai, Y.3
Yamaguchi, S.4
Enoki, T.5
Umeda, Y.6
Hagimoto, K.7
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4
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0031188470
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40Gbit/s, fully-integrated 1:2 demultiplexer 1C using InAlAs/InGaAs/InP HEMTs
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July 1997
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T Otsuji, M Yoneyama, Y Imai, T Enoki, and Y Umeda40Gbit/s, fully-integrated 1:2 demultiplexer 1C using InAlAs/InGaAs/InP HEMTsElectron Lett , vol 33, lG, 1409-1410, July 1997
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Electron Lett
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, pp. 1409-1410
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Otsuji, T.1
Yoneyama, M.2
Imai, Y.3
Enoki, T.4
Umeda, Y.5
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5
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0005356888
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SCFL static frequency divider using InAlAs/InGaAs/InP HEMTs
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Sept
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Y Umeda, K Osafune, T Enoki, H Ito, and Y IshiiSCFL static frequency divider using InAlAs/InGaAs/InP HEMTsProc 25th European Microw Conf , Bologna, 222-228, Sept1995
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(1995)
Proc 25th European Microw Conf , Bologna
, pp. 222-228
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Umeda, Y.1
Osafune, K.2
Enoki, T.3
Ito, H.4
Ishii, Y.5
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6
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0031378968
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[G] T Otsuji, K Murata, T Enoki, and Y UmcdaAn 80-Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs 1997 IEEE GaAs 1C Symp Tech Dig , 183-186, 1997
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(1997)
An 80-Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs 1997 IEEE GaAs 1C Symp Tech Dig
, pp. 183-186
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Otsuji, T.1
Murata, K.2
Enoki, T.3
Umcda, Y.4
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7
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3042647066
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Ultrahigh-specd integrated circuits using InP-bascd high-electron-mobility transistors (HEMTs)
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March
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T Enoki, H Yokoyama, Y Umeda, and T OtsujiUltrahigh-specd integrated circuits using InP-bascd high-electron-mobility transistors (HEMTs)Jpn J Appl Phys vol 37, part 1, 3B, 1359-1364, March 1997
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(1997)
Jpn J Appl Phys
, vol.37
, Issue.1 PART
, pp. 1359-1364
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Enoki, T.1
Yokoyama, H.2
Umeda, Y.3
Otsuji, T.4
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8
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0028274460
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0 05-umi-gate InAIAs/InGaAs high electron mobility transistor and reduction of its short-channel effects
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Jan
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T Enoki, M Tomizawa, Y Umeda, and Y Ishii0 05-umi-gate InAIAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsJpn J Appl Phys , vol 33, pt l, lB, 798-803, Jan1994
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(1994)
Jpn J Appl Phys
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, pp. 798-803
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Enoki, T.1
Tomizawa, M.2
Umeda, Y.3
Ishii, Y.4
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9
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0028697187
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Device technologies for InP-bascd HEMTs and their application to ICs
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Oct
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T Enoki, T Kobayashi, and Y IshiiDevice technologies for InP-bascd HEMTs and their application to ICs1994 IEEE GaAs 1C Symp Tech Dig , 337-340, Oct1994
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(1994)
1994 IEEE GaAs 1C Symp Tech Dig
, pp. 337-340
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Enoki, T.1
Kobayashi, T.2
Ishii, Y.3
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10
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0029217064
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0 1-/an InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
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May
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T Enoki, H Ito, K Ikuta, and Y Ishii0 1-/an InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVDProc 7th IEEE Int Conf InP and Related Materials, Sapporo, 81-84, May 1995
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(1995)
Proc 7th IEEE Int Conf InP and Related Materials, Sapporo
, pp. 81-84
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Enoki, T.1
Ito, H.2
Ikuta, K.3
Ishii, Y.4
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11
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0030689164
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A 40-Gbit/ optical repeater circuits using InAIAs/InGaAs IIEMT digital 1C chip set
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M Yoneyama, A Sano, K Hagimoto, T Otsuji, K Murata, Y Imai, S Yamaguchi, T Enoki, and E SanoA 40-Gbit/ optical repeater circuits using InAIAs/InGaAs IIEMT digital 1C chip set1997 IEEE MTT-S Int Microw Symp Dig , 461-464 1997
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(1997)
1997 IEEE MTT-S Int Microw Symp Dig
, pp. 461-464
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Yoneyama, M.1
Sano, A.2
Hagimoto, K.3
Otsuji, T.4
Murata, K.5
Imai, Y.6
Yamaguchi, S.7
Enoki, T.8
Sano, E.9
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12
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33746334886
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A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0 2/an GaAs MESFET
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K Murata, T Otsuji, M Ohhata, M Togashi, E Sano, and M SuzukiA novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0 2/an GaAs MESFET1994 IEEE GaAs 1C Symp Tech Dig , l93-19G 1994
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(1994)
1994 IEEE GaAs 1C Symp Tech Dig
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Murata, K.1
Otsuji, T.2
Ohhata, M.3
Togashi, M.4
Sano, E.5
Suzuki, M.6
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13
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0030386946
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High-yield design technologies for InAlAs/InGaAs/InPHEMT analog-digital ICs
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Dec199G [14] Y Umeda, K Osafune, T Otsuji, T Enoki, and Y IshiiLoad-resistance dependence of toggle frequency for an SCFL frequency divider including waveform-clip effectProc199G Electronics Society Conf IEICE, C-434, Sept199G
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Y Umeda, T Enoki, K Osafune, H Ito, and Y IshiiHigh-yield design technologies for InAlAs/InGaAs/InPHEMT analog-digital ICsIEEE Trans Microwave Theory & Tech , vol 44, 12, 23Gl-23G8, Dec199G [14] Y Umeda, K Osafune, T Otsuji, T Enoki, and Y IshiiLoad-resistance dependence of toggle frequency for an SCFL frequency divider including waveform-clip effectProc199G Electronics Society Conf IEICE, C-434, Sept199G
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IEEE Trans Microwave Theory & Tech
, vol.44
, Issue.12
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Umeda, Y.1
Enoki, T.2
Osafune, K.3
Ito, H.4
Ishii, Y.5
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