Suppression of reverse short channel effect by a buried carbon layer

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 725-728

  Gossmann, H J ^a   Rafferty, C S ^a   Hobler, G ^a   Vuong, H H ^a   Jacobson, D C ^a   Frei, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

REVERSE SHORT CHANNEL EFFECTS; TRANSIENT ENHANCED DIFFUSIONS (TED);

SEMICONDUCTING SILICON;

EID: 0032254786     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)