Ultra-shallow junction formation using very low energy B and BF2 sources

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 607-610

  Osburn, C M ^a   Downey, D F ^a   Felch, S B ^a   Lee, B S ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; BORON; BORON COMPOUNDS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; ION SOURCES; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; SILICON WAFERS;

ULTRA SHALLOW JUNCTION FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0030351781     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)