Area-selective regrowth followed by AsH 3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 549-553

  Ohno, Takeo ^a   Oyama, Yutaka ^a,b   Tezuka, Kenji ^a   Suto, Ken ^a,b   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

GaAs; Regrowth; Selective epitaxy; Semiconductor homo and hetero interfaces; Sidewall; Tunnel junction

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); INTERFACES (MATERIALS); MOLECULAR ORIENTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STOICHIOMETRY; TUNNEL JUNCTIONS; ULTRAHIGH VACUUM;

REGROWTH;

SURFACE TREATMENT;

EID: 0038684460     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00506-3     Document Type: Conference Paper

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