Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Journal of Crystal Growth

Volumn 246, Issue 1-2, 2002, Pages 15-20

  Oyama, Yutaka ^a,b   Tezuka, Kenji ^a   Suto, Ken ^a,b   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

A1. Doping; A1. Impurities; A3. Atomic layer epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting III V materials

Indexed keywords

IMPURITIES; SEMICONDUCTOR DOPING; SUBSTRATES; SULFUR; TELLURIUM; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

CHARGE DISTRIBUTION; ELECTRONEGATIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036888729     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01784-0     Document Type: Article

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