Electrical activation of Te and Se in GaAs at extremely heavy doping up to 5×1020 cm-3 prepared by intermittent injection of TEG/AsH3 in ultra-high vacuum

Journal of Crystal Growth

Volumn 212, Issue 3, 2000, Pages 402-410

  Oyama, Yutaka ^a,b,c   Nishizawa, Jun ichi ^b,c   Seo, Kohichi ^a   Suto, Ken ^a,b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c Faculty of Sports Science Sendai University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SELENIUM; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; STOICHIOMETRY;

ACTIVATION RATIO;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034188120     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00206-2     Document Type: Article

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