Optimization of low temperature surface treatment of GaAs crystal

Surface Science

Volumn 348, Issue 1-2, 1996, Pages 105-114

  Nishizawa, Jun Ichi ^a   Oyama, Yutaka ^b   Plotka, Piotr ^b   Sakuraba, Hiroshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Electrical transport measurements; Gallium arsenide; Semiconductor semiconductor interfaces; Semiconductor semiconductor thin film structures; Single crystal epitaxy; Surface chemical reaction; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL REACTIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS; SURFACE TREATMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARSINE; ELECTRICAL TRANSPORT MEASUREMENTS; PHOTOSTIMULATED MOLECULAR LAYER EPITAXY; QUADRUPOLE MASS ANALYSIS; SEMICONDUCTOR SEMICONDUCTOR THIN FILM STRUCTURES; SINGLE CRYSTAL EPITAXY; SURFACE CHEMICAL REACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030106220     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01022-X     Document Type: Article

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