Oscillation frequency control of 60 GHz-band TUNNETT diodes

Electronics Letters

Volumn 38, Issue 13, 2002, Pages 660-661

  Nishizawa, J ^a   Makabe, H ^a   Matsumoto, F ^a   Plotka, P ^a   Kurabayashi, T ^a  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CIRCUIT OSCILLATIONS; ELECTRIC FREQUENCY CONTROL; IMPEDANCE MATCHING (ELECTRIC); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTRUM ANALYZERS; TUNNEL JUNCTIONS;

HARMONIC MIXER; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; TUNNEL INJECTION TRANSIT TIME EFFECT DIODE; WAVEGUIDE RESONATING CAVITY;

TUNNEL DIODES;

EID: 0037142480     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020432     Document Type: Article

References (9)

1. High frequency properties of the avalanching negative resistance diode
2. Bulk oscillation by tunnel injection
3. CW mm-wave GaAs TUNNETT diode
4. GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above
5. 150 GHz GaAs MITTAT source
6. Recent advances in the performance of InP GUNN devices and GaAs TUNNETT diodes for the 100-300 GHz frequency range and above
7. Submillimeter wave oscillation from GaAs TUNNETT diodes
8. + tunnett diode
9. The GaAs CW TUNNETT diode