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Journal of Applied Physics

Volumn 83, Issue 10, 1998, Pages 5573-5575

Hydrostatic pressure studies of GaAs tunnel diodes

(5) Beji, L a El Jani, B a Gibart, P b Portal, J C c Basmaji, P d

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b CRHEA CNRS (France)

c CNRS (France)

d UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FERMI LEVEL; HYDROSTATIC PRESSURE; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

PEAK CURRENT DENSITY; VALLEY CURRENT DENSITY;

TUNNEL DIODES;

EID: 0032069970 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.367394 Document Type: Article

Times cited : (8)

References (13)

1
- 84927992698
- P. M. Mooney, J. Appl. Phys. 67, R1 (1990).
- (1990) J. Appl. Phys. , vol.67
- Mooney, P.M.¹

2
- 0038232147
- edited by E. Muñoz Scitec, Switzerland
- E. Muñoz and E. Calleja, in DX Centers-Donors in AlGaAs and Related Compounds, edited by E. Muñoz (Scitec, Switzerland, 1994), Vol. 1089, p. 135.
- (1994) DX Centers-Donors in AlGaAs and Related Compounds , vol.1089 , pp. 135
- Muñoz, E.¹ Calleja, E.²

3
- 0343673510
- P. Basmaji, M. Guittard, A. Rudra, J. F. Carlin, and P. Gibart, J. Appl. Phys. 62, 2103 (1987).
- (1987) J. Appl. Phys. , vol.62 , pp. 2103
- Basmaji, P.¹ Guittard, M.² Rudra, A.³ Carlin, J.F.⁴ Gibart, P.⁵

4
- 3643137824
- D. K. Maude, L. Eaves, T. Foster, and J. C. Portal, Phys. Rev. Lett. 62, 1922 (1989).
- (1989) Phys. Rev. Lett. , vol.62 , pp. 1922
- Maude, D.K.¹ Eaves, L.² Foster, T.³ Portal, J.C.⁴

5
- 0001084324
- T. N. Theis, P. M. Mooney, and S. L. Wright, Phys. Rev. Lett. 60, 361 (1988).
- (1988) Phys. Rev. Lett. , vol.60 , pp. 361
- Theis, T.N.¹ Mooney, P.M.² Wright, S.L.³

6
- 3643147228
- D. K. Maude, J. C. Portal, L. Dmowski, T. Foster, M. Nathan, M. Heiblum, J. J. Harris, and R. B. Beall, Phys. Rev. Lett. 59, 815 (1987.)
- (1987) Phys. Rev. Lett. , vol.59 , pp. 815
- Maude, D.K.¹ Portal, J.C.² Dmowski, L.³ Foster, T.⁴ Nathan, M.⁵ Heiblum, M.⁶ Harris, J.J.⁷ Beall, R.B.⁸

7
- 0008006207
- J. P. Silveira and T. Briones, Appl. Phys. Lett. 65, 573 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 573
- Silveira, J.P.¹ Briones, T.²

8
- 0002930518
- E. O. Kane, J. Appl. Phys. 32, 83 (1961).
- (1961) J. Appl. Phys. , vol.32 , pp. 83
- Kane, E.O.¹

9
- 0004005306
- Wiley Interscience, New York
- S. M. Sze, Physics of Semiconductors Devices, 2nd ed. (Wiley Interscience, New York, 1981).
- (1981) Physics of Semiconductors Devices, 2nd Ed.
- Sze, S.M.¹

10
- 0020193772
- J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
- (1982) J. Appl. Phys. , vol.53
- Blakemore, J.S.¹

11
- 0000256989
- J. Leymarie, M. Leroux, and G. Neu, Phys. Rev. B 42, 1482 (1990); M. Leroux, J. M. Sallese, and J. Leymarie, Semicond. Sci. Technol. 6, 514 (1991).
- (1990) Phys. Rev. B , vol.42 , pp. 1482
- Leymarie, J.¹ Leroux, M.² Neu, G.³

12
- 0026173625
- J. Leymarie, M. Leroux, and G. Neu, Phys. Rev. B 42, 1482 (1990); M. Leroux, J. M. Sallese, and J. Leymarie, Semicond. Sci. Technol. 6, 514 (1991).
- (1991) Semicond. Sci. Technol. , vol.6 , pp. 514
- Leroux, M.¹ Sallese, J.M.² Leymarie, J.³

13
- 3643106608
- P. Basmaji, J. C. Portal, R. Aulombard, C. Fau, D. K. Maude, L. Eaves, and P. Gibart, Inst. Phys. Conf. Ser. 91, 223 (1987).
- (1987) Inst. Phys. Conf. Ser. , vol.91 , pp. 223
- Basmaji, P.¹ Portal, J.C.² Aulombard, R.³ Fau, C.⁴ Maude, D.K.⁵ Eaves, L.⁶ Gibart, P.⁷

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