Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2563-2565

  Oyama, Yutaka ^a   Ohno, Takeo ^a   Tezuka, Kenji ^a   Suto, Ken ^a   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; INTERMITTENT INJECTION; JUNCTION AREA; LOW TEMPERATURES; LOW-TEMPERATURE AREA-SELECTIVE REGROWTHS; NEGATIVE DIFFERENTIAL CONDUCTANCE; ORIENTATION DEPENDENCE; PEAK CURRENT DENSITY; STRIP STRUCTURE;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

TUNNEL JUNCTIONS;

EID: 79956032703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510162     Document Type: Article

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